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january 2010 doc id 15420 rev 2 1/19 19 STB13NM60N,std13nm60n,stf13nm60n stp13nm60n,stw13nm60n n-channel 600 v, 0.28 ? , 11 a mdmesh? ii power mosfet in d 2 pak, dpak, to-220fp, to-220, to-247 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices implements second generation mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d STB13NM60N 650 v < 0.36 ? 11 a std13nm60n 650 v < 0.36 ? 11 a stf13nm60n 650 v < 0.36 ? 11 a stp13nm60n 650 v < 0.36 ? 11 a stw13nm60n 650 v < 0.36 ? 11 a to-220 to-220fp dpak 1 3 1 2 3 1 2 3 1 2 3 to-247 1 3 d2pak 3 # $ ' 3 table 1. device summary order codes marking packages packaging STB13NM60N 13nm60n d2pak tape and reel std13nm60n 13nm60n dpak tape and reel stf13nm60n 13nm60n to-220fp tube stp13nm60n 13nm60n to-220 tube stw13nm60n 13nm60n to-247 tube www.st.com
contents stb/d/f/p/w13nm60n 2/19 doc id 15420 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 stb/d/f/p/w13nm60n electrical ratings doc id 15420 rev 2 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak,to-220, to-247, d2pak to-220fp v ds drain-source voltage (v gs = 0) 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 11 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 6.93 6.93 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 44 44 (1) a p tot total dissipation at t c = 25 c 90 25 w dv/dt (3) 3. i sd 11 a, di/dt 400 a/s, v dd 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak d2pak to-220 to-247 to-220fp r thj-case thermal resistance junction- case max 1.39 5 c/w r thj-amb thermal resistance junction- ambient max 62.5 50 62.5 c/w r thj-pcb thermal resistance junction-pcb max 50 30 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repeti tive or not-repetitive (pulse width limited by tj max) 3.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 200 mj electrical characteristics stb/d/f/p/w13nm60n 4/19 doc id 15420 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v dv/dt (1) 1. characteristic value at turn off on inductive load drain source voltage slope v dd =480 v, i d = 9 a, v gs =10 v 45 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5.5 a 0.28 0.36 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds =15 v , i d = 5.5 a - 7 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 790 60 3.6 - pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 135 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 11 a, v gs = 10 v, (see figure 21) - 30 15 4 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain -4.7 - ? stb/d/f/p/w13nm60n electr ical characteristics doc id 15420 rev 2 5/19 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 5.5 a r g =4.7 ? v gs = 10 v (see figure 20) - 3 8 30 10 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v (see figure 22) - 230 2 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 22) - 290 190 17 ns c a electrical characteristics stb/d/f/p/w13nm60n 6/19 doc id 15420 rev 2 2.1 electrical characteristi cs (curves) figure 2. safe operating area for to-220 and d2pak figure 3. thermal impedance for to-220 and d2pak figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. safe operating area for to-220fp figure 7. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 25 8 v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 9 83 v1 ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v stb/d/f/p/w13nm60n electr ical characteristics doc id 15420 rev 2 7/19 figure 8. safe operating area for dpak figure 9. thermal impedance for dpak figure 10. output characteristics figure 11. transfer characteristics figure 12. transconductance figure 13. static drain-source on resistance ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s ? s m s m s 4 j ? # 4 c ? # 3 i n g l e p u l s e ! - v ) $ 6 $ 3 6 ! 6 ' 3 6 ! - v ) $ 6 ' 3 6 ! ! - v ' & |